AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition

por Tzou, An-Jye, Chu, Kuo-Hsiung, Lin, I-Feng, Østreng, Erik, Fang, Yung-Sheng, Wu, Xiao-Peng, Wu, Bo-Wei, Shen, Chang-Hong, Shieh, Jia-Ming, Yeh, Wen-Kuan, Chang, Chun-Yen, Kuo, Hao-Chung
Publicado 2017