Influence of the oxide layer for growth of self-assisted InAs nanowires on Si(111)

por Madsen, Morten Hannibal, Aagesen, Martin, Krogstrup, Peter, Sørensen, Claus, Nygård, Jesper
Publicado 2011

Time-Efficient High-Resolution Large-Area Nano-Patterning of Silicon Dioxide

por Lin, Li, Ou, Yiyu, Aagesen, Martin, Jensen, Flemming, Herstrøm, Berit, Ou, Haiyan
Publicado 2017

Defect-Free Axially Stacked GaAs/GaAsP Nanowire Quantum Dots with Strong Carrier Confinement

por Zhang, Yunyan, Velichko, Anton V., Fonseka, H. Aruni, Parkinson, Patrick, Gott, James A., Davis, George, Aagesen, Martin, Sanchez, Ana M., Mowbray, David, Liu, Huiyun
Publicado 2021

Highly Strained III–V–V Coaxial Nanowire Quantum Wells with Strong Carrier Confinement

por Zhang, Yunyan, Davis, George, Fonseka, H. Aruni, Velichko, Anton, Gustafsson, Anders, Godde, Tillmann, Saxena, Dhruv, Aagesen, Martin, Parkinson, Patrick W., Gott, James A., Huo, Suguo, Sanchez, Ana M., Mowbray, David J., Liu, Huiyun
Publicado 2019

Initialization of Nanowire or Cluster Growth Critically Controlled by the Effective V/III Ratio at the Early Nucleation Stage

por Chen, Chen, Chu, Yanmeng, Zhang, Linjun, Lin, Haojun, Fang, Wenzhang, Zhang, Zheyu, Zha, Chaofei, Wang, Kejia, Yang, Hui, Yu, Xuezhe, Gott, James A., Aagesen, Martin, Cheng, Zhiyuan, Huo, Suguo, Liu, Huiyun, Sanchez, Ana M., Zhang, Yunyan
Publicado 2023