Low Buffer Trapping Effects above 1200 V in Normally off GaN-on-Silicon Field Effect Transistors

por Abid, Idriss, Hamdaoui, Youssef, Mehta, Jash, Derluyn, Joff, Medjdoub, Farid
Publicado 2022

High Lateral Breakdown Voltage in Thin Channel AlGaN/GaN High Electron Mobility Transistors on AlN/Sapphire Templates

por Abid, Idriss, Kabouche, Riad, Bougerol, Catherine, Pernot, Julien, Masante, Cedric, Comyn, Remi, Cordier, Yvon, Medjdoub, Farid
Publicado 2019

High Breakdown Voltage and Low Buffer Trapping in Superlattice GaN-on-Silicon Heterostructures for High Voltage Applications

por Tajalli, Alaleh, Meneghini, Matteo, Besendörfer, Sven, Kabouche, Riad, Abid, Idriss, Püsche, Roland, Derluyn, Joff, Degroote, Stefan, Germain, Marianne, Meissner, Elke, Zanoni, Enrico, Medjdoub, Farid, Meneghesso, Gaudenzio
Publicado 2020

Vertical Leakage in GaN-on-Si Stacks Investigated by a Buffer Decomposition Experiment

por Tajalli, Alaleh, Borga, Matteo, Meneghini, Matteo, De Santi, Carlo, Benazzi, Davide, Besendörfer, Sven, Püsche, Roland, Derluyn, Joff, Degroote, Stefan, Germain, Marianne, Kabouche, Riad, Abid, Idriss, Meissner, Elke, Zanoni, Enrico, Medjdoub, Farid, Meneghesso, Gaudenzio
Publicado 2020