Si-Doped HfO(2)-Based Ferroelectric Tunnel Junctions with a Composite Energy Barrier for Non-Volatile Memory Applications

por Lee, Yoseop, Song, Sungmun, Ham, Woori, Ahn, Seung-Eon
Publicado 2022

Improvement of Resistance Change Memory Characteristics in Ferroelectric and Antiferroelectric (like) Parallel Structures

por Kho, Wonwoo, Hwang, Hyunjoo, Kim, Jisoo, Park, Gyuil, Ahn, Seung-Eon
Publicado 2023

Yttrium Doping Effects on Ferroelectricity and Electric Properties of As-Deposited Hf(1−x)Zr(x)O(2) Thin Films via Atomic Layer Deposition

por Oh, Youkyoung, Lee, Seung Won, Choi, Jeong-Hun, Ahn, Seung-Eon, Kim, Hyo-Bae, Ahn, Ji-Hoon
Publicado 2023

Synaptic Characteristic of Hafnia-Based Ferroelectric Tunnel Junction Device for Neuromorphic Computing Application

por Kho, Wonwoo, Park, Gyuil, Kim, Jisoo, Hwang, Hyunjoo, Byun, Jisu, Kang, Yoomi, Kang, Minjeong, Ahn, Seung-Eon
Publicado 2022

Spike Optimization to Improve Properties of Ferroelectric Tunnel Junction Synaptic Devices for Neuromorphic Computing System Applications

por Byun, Jisu, Kho, Wonwoo, Hwang, Hyunjoo, Kang, Yoomi, Kang, Minjeong, Noh, Taewan, Kim, Hoseong, Lee, Jimin, Kim, Hyo-Bae, Ahn, Ji-Hoon, Ahn, Seung-Eon
Publicado 2023