New Submicron Low Gate Leakage In(0.52)Al(0.48)As-In(0.7)Ga(0.3)As pHEMT for Low-Noise Applications

por Packeer Mohamed, Mohamed Fauzi, Mohamed Omar, Mohamad Faiz, Akbar Jalaludin Khan, Muhammad Firdaus, Ghazali, Nor Azlin, Hairi, Mohd Hendra, Falina, Shaili, Samsol Baharin, Mohd Syamsul Nasyriq
Publicado 2021