A non-volatile cryogenic random-access memory based on the quantum anomalous Hall effect

por Alam, Shamiul, Hossain, Md Shafayat, Aziz, Ahmedullah
Publicado 2021

A three-terminal non-volatile ferroelectric switch with an insulator–metal transition channel

por Vaidya, Jaykumar, Kanthi, R. S. Surya, Alam, Shamiul, Amin, Nazmul, Aziz, Ahmedullah, Shukla, Nikhil
Publicado 2022

CMOS-compatible ising machines built using bistable latches coupled through ferroelectric transistor arrays

por Mallick, Antik, Zhao, Zijian, Bashar, Mohammad Khairul, Alam, Shamiul, Islam, Md Mazharul, Xiao, Yi, Xu, Yixin, Aziz, Ahmedullah, Narayanan, Vijaykrishnan, Ni, Kai, Shukla, Nikhil
Publicado 2023