Polymer ferroelectric field-effect memory device with SnO channel layer exhibits record hole mobility

por Caraveo-Frescas, J. A., Khan, M. A., Alshareef, H. N.
Publicado 2014

Thin Film Complementary Metal Oxide Semiconductor (CMOS) Device Using a Single-Step Deposition of the Channel Layer

por Nayak, Pradipta K., Caraveo-Frescas, J. A., Wang, Zhenwei, Hedhili, M. N., Wang, Q. X., Alshareef, H. N.
Publicado 2014

Low Temperature Processed Complementary Metal Oxide Semiconductor (CMOS) Device by Oxidation Effect from Capping Layer

por Wang, Zhenwei, Al-Jawhari, Hala A., Nayak, Pradipta K., Caraveo-Frescas, J. A., Wei, Nini, Hedhili, M. N., Alshareef, H. N.
Publicado 2015