Interface Engineering for the Enhancement of Carrier Transport in Black Phosphorus Transistor with Ultra-Thin High-k Gate Dielectric

por Ling, Zhi-Peng, Zhu, Jun-Tao, Liu, Xinke, Ang, Kah-Wee
Publicado 2016

The effects of point defect type, location, and density on the Schottky barrier height of Au/MoS(2) heterojunction: a first-principles study

por Sorkin, Viacheslav, Zhou, Hangbo, Yu, Zhi Gen, Ang, Kah-Wee, Zhang, Yong-Wei
Publicado 2022

Author Correction: The effects of point defect type, location, and density on the Schottky barrier height of Au/MoS(2) heterojunction: a first-principles study

por Sorkin, Viacheslav, Zhou, Hangbo, Yu, Zhi Gen, Ang, Kah-Wee, Zhang, Yong-Wei
Publicado 2022

Black Phosphorus Transistors with Near Band Edge Contact Schottky Barrier

por Ling, Zhi-Peng, Sakar, Soumya, Mathew, Sinu, Zhu, Jun-Tao, Gopinadhan, K., Venkatesan, T., Ang, Kah-Wee
Publicado 2015

Impact and Origin of Interface States in MOS Capacitor with Monolayer MoS(2) and HfO(2) High-k Dielectric

por Xia, Pengkun, Feng, Xuewei, Ng, Rui Jie, Wang, Shijie, Chi, Dongzhi, Li, Cequn, He, Zhubing, Liu, Xinke, Ang, Kah-Wee
Publicado 2017

Zero-bias mid-infrared graphene photodetectors with bulk photoresponse and calibration-free polarization detection

por Wei, Jingxuan, Li, Ying, Wang, Lin, Liao, Wugang, Dong, Bowei, Xu, Cheng, Zhu, Chunxiang, Ang, Kah-Wee, Qiu, Cheng-Wei, Lee, Chengkuo
Publicado 2020

Black Phosphorus Based Field Effect Transistors with Simultaneously Achieved Near Ideal Subthreshold Swing and High Hole Mobility at Room Temperature

por Liu, Xinke, Ang, Kah-Wee, Yu, Wenjie, He, Jiazhu, Feng, Xuewei, Liu, Qiang, Jiang, He, Dan Tang, Wen, Jiao, Lu, Youming, Liu, Wenjun, Cao, Peijiang, Han, Shun, Wu, Jing, Liu, Wenjun, Wang, Xi, Zhu, Deliang, He, Zhubing
Publicado 2016