Flexible metal-semiconductor-metal device prototype on wafer-scale thick boron nitride layers grown by MOVPE

por Li, Xin, Jordan, Matthew B., Ayari, Taha, Sundaram, Suresh, El Gmili, Youssef, Alam, Saiful, Alam, Muhbub, Patriarche, Gilles, Voss, Paul L., Paul Salvestrini, Jean, Ougazzaden, Abdallah
Publicado 2017

Gas sensors boosted by two-dimensional h-BN enabled transfer on thin substrate foils: towards wearable and portable applications

por Ayari, Taha, Bishop, Chris, Jordan, Matthew B., Sundaram, Suresh, Li, Xin, Alam, Saiful, ElGmili, Youssef, Patriarche, Gilles, Voss, Paul L., Salvestrini, Jean Paul, Ougazzaden, Abdallah
Publicado 2017

Effectiveness of selective area growth using van der Waals h-BN layer for crack-free transfer of large-size III-N devices onto arbitrary substrates

por Karrakchou, Soufiane, Sundaram, Suresh, Ayari, Taha, Mballo, Adama, Vuong, Phuong, Srivastava, Ashutosh, Gujrati, Rajat, Ahaitouf, Ali, Patriarche, Gilles, Leichlé, Thierry, Gautier, Simon, Moudakir, Tarik, Voss, Paul L., Salvestrini, Jean Paul, Ougazzaden, Abdallah
Publicado 2020