Understanding the Origin of Metal Gate Work Function Shift and Its Impact on Erase Performance in 3D NAND Flash Memories

por Ramesh, Sivaramakrishnan, Ajaykumar, Arjun, Ragnarsson, Lars-Åke, Breuil, Laurent, El Hajjam, Gabriel Khalil, Kaczer, Ben, Belmonte, Attilio, Nyns, Laura, Soulié, Jean-Philippe, Van den bosch, Geert, Rosmeulen, Maarten
Publicado 2021

Device modeling of two-steps oxygen anneal-based submicron InGaZnO back-end-of-line field-effect transistor enabling short-channel effects suppression

por Kim, Donguk, Kim, Je-Hyuk, Choi, Woo Sik, Yang, Tae Jun, Jang, Jun Tae, Belmonte, Attilio, Rassoul, Nouredine, Subhechha, Subhali, Delhougne, Romain, Kar, Gouri Sankar, Lee, Wonsok, Cho, Min Hee, Ha, Daewon, Kim, Dae Hwan
Publicado 2022