A differential Hall effect measurement method with sub-nanometre resolution for active dopant concentration profiling in ultrathin doped Si(1−)(x)Ge(x) and Si layers

por Daubriac, Richard, Scheid, Emmanuel, Rizk, Hiba, Monflier, Richard, Joblot, Sylvain, Beneyton, Rémi, Acosta Alba, Pablo, Kerdilès, Sébastien, Cristiano, Filadelfo
Publicado 2018