The impact of dislocations on AlGaN/GaN Schottky diodes and on gate failure of high electron mobility transistors

por Besendörfer, Sven, Meissner, Elke, Medjdoub, Farid, Derluyn, Joff, Friedrich, Jochen, Erlbacher, Tobias
Publicado 2020

X-ray characterization of physical-vapor-transport-grown bulk AlN single crystals

por Wicht, Thomas, Müller, Stephan, Weingärtner, Roland, Epelbaum, Boris, Besendörfer, Sven, Bläß, Ulrich, Weisser, Matthias, Unruh, Tobias, Meissner, Elke
Publicado 2020

High Breakdown Voltage and Low Buffer Trapping in Superlattice GaN-on-Silicon Heterostructures for High Voltage Applications

por Tajalli, Alaleh, Meneghini, Matteo, Besendörfer, Sven, Kabouche, Riad, Abid, Idriss, Püsche, Roland, Derluyn, Joff, Degroote, Stefan, Germain, Marianne, Meissner, Elke, Zanoni, Enrico, Medjdoub, Farid, Meneghesso, Gaudenzio
Publicado 2020

Vertical Leakage in GaN-on-Si Stacks Investigated by a Buffer Decomposition Experiment

por Tajalli, Alaleh, Borga, Matteo, Meneghini, Matteo, De Santi, Carlo, Benazzi, Davide, Besendörfer, Sven, Püsche, Roland, Derluyn, Joff, Degroote, Stefan, Germain, Marianne, Kabouche, Riad, Abid, Idriss, Meissner, Elke, Zanoni, Enrico, Medjdoub, Farid, Meneghesso, Gaudenzio
Publicado 2020