Nonpolar (112̅0) GaN Metal–Semiconductor–Metal Photodetectors with Superior Performance on Silicon

por Cai, Yuefei, Shen, Shuoheng, Zhu, Chenqi, Zhao, Xuanming, Bai, Jie, Wang, Tao
Publicado 2020

A Direct Epitaxial Approach To Achieving Ultrasmall and Ultrabright InGaN Micro Light-Emitting Diodes (μLEDs)

por Bai, Jie, Cai, Yuefei, Feng, Peng, Fletcher, Peter, Zhao, Xuanming, Zhu, Chenqi, Wang, Tao
Publicado 2020

Ultrasmall, Ultracompact and Ultrahigh Efficient InGaN Micro Light Emitting Diodes (μLEDs) with Narrow Spectral Line Width

por Bai, Jie, Cai, Yuefei, Feng, Peng, Fletcher, Peter, Zhu, Chenqi, Tian, Ye, Wang, Tao
Publicado 2020

High Modulation Bandwidth of Semipolar (11–22) InGaN/GaN LEDs with Long Wavelength Emission

por Haggar, Jack IH., Cai, Yuefei, Ghataora, Suneal S., Smith, Richard M., Bai, Jie, Wang, Tao
Publicado 2020

Direct Epitaxial Approach to Achieve a Monolithic On-Chip Integration of a HEMT and a Single Micro-LED with a High-Modulation Bandwidth

por Cai, Yuefei, Haggar, Jack I. H., Zhu, Chenqi, Feng, Peng, Bai, Jie, Wang, Tao
Publicado 2021

Strain Analysis of GaN HEMTs on (111) Silicon with Two Transitional Al(x)Ga(1−x)N Layers

por Cai, Yuefei, Zhu, Chenqi, Jiu, Ling, Gong, Yipin, Yu, Xiang, Bai, Jie, Esendag, Volkan, Wang, Tao
Publicado 2018

Exploring an Approach toward the Intrinsic Limits of GaN Electronics

por Jiang, Sheng, Cai, Yuefei, Feng, Peng, Shen, Shuoheng, Zhao, Xuanming, Fletcher, Peter, Esendag, Volkan, Lee, Kean-Boon, Wang, Tao
Publicado 2020

Identification of Novel Alectinib-Resistant ALK Mutation G1202K with Sensitization to Lorlatinib: A Case Report and in silico Structural Modelling

por Yang, Ping, Cao, Ran, Bao, Hua, Wu, Xue, Yang, Lingling, Zhu, Dongqin, Zhang, Lu, Peng, Liming, Cai, Yuefei, Zhang, Weijun, Shao, Yang
Publicado 2021