Effect of P-Type GaN Buried Layer on the Temperature of AlGaN/GaN HEMTs

por Lv, Hanghang, Cao, Yanrong, Ma, Maodan, Wang, Zhiheng, Zhang, Xinxiang, Chen, Chuan, Wu, Linshan, Lv, Ling, Zheng, Xuefeng, Wang, Yongkun, Tian, Wenchao, Ma, Xiaohua
Publicado 2023

Simulation of Single-Event Transient Effect for GaN High-Electron-Mobility Transistor

por Wang, Zhiheng, Cao, Yanrong, Zhang, Xinxiang, Chen, Chuan, Wu, Linshan, Ma, Maodan, Lv, Hanghang, Lv, Ling, Zheng, Xuefeng, Tian, Wenchao, Ma, Xiaohua, Hao, Yue
Publicado 2023

Effect of Acceptor Traps in GaN Buffer Layer on Breakdown Performance of AlGaN/GaN HEMTs

por Ma, Maodan, Cao, Yanrong, Lv, Hanghang, Wang, Zhiheng, Zhang, Xinxiang, Chen, Chuan, Wu, Linshan, Lv, Ling, Zheng, Xuefeng, Tian, Wenchao, Ma, Xiaohua, Hao, Yue
Publicado 2022

Combined Effect of TID Radiation and Electrical Stress on NMOSFETs

por Cao, Yanrong, Wang, Min, Zheng, Xuefeng, Zhang, Enxia, Lv, Ling, Wang, Liang, Ma, Maodan, Lv, Hanghang, Wang, Zhiheng, Wang, Yongkun, Tian, Wenchao, Ma, Xiaohua, Hao, Yue
Publicado 2022