Quantum Enhancement of a S/D Tunneling Model in a 2D MS-EMC Nanodevice Simulator: NEGF Comparison and Impact of Effective Mass Variation

por Medina-Bailon, Cristina, Carrillo-Nunez, Hamilton, Lee, Jaehyun, Sampedro, Carlos, Padilla, Jose Luis, Donetti, Luca, Georgiev, Vihar, Gamiz, Francisco, Asenov, Asen
Publicado 2020

Variability Predictions for the Next Technology Generations of n-type Si(x)Ge(1−x) Nanowire MOSFETs

por Lee, Jaehyun, Badami, Oves, Carrillo-Nuñez, Hamilton, Berrada, Salim, Medina-Bailon, Cristina, Dutta, Tapas, Adamu-Lema, Fikru, Georgiev, Vihar P., Asenov, Asen
Publicado 2018

Simulation of the Impact of Ionized Impurity Scattering on the Total Mobility in Si Nanowire Transistors

por Sadi, Toufik, Medina-Bailon, Cristina, Nedjalkov, Mihail, Lee, Jaehyun, Badami, Oves, Berrada, Salim, Carrillo-Nunez, Hamilton, Georgiev, Vihar, Selberherr, Siegfried, Asenov, Asen
Publicado 2019