Correction: Chen et al. New n-p Junction Floating Gate to Enhance the Operation Performance of a Semiconductor Memory Device. Materials 2022, 15, 3640

por Chen, Yi-Yueh, Lin, Su-Jien, Chang, Shou-Yi
Publicado 2022

New n-p Junction Floating Gate to Enhance the Operation Performance of a Semiconductor Memory Device

por Chen, Yi-Yueh, Lee, Feng-Ming, Lin, Yu-Yu, Lee, Chih-Hsiung, Chen, Wei-Chen, Shu, Che-Kai, Lin, Su-Jien, Chang, Shou-Yi, Lu, Chih-Yuan
Publicado 2022