High Lateral Breakdown Voltage in Thin Channel AlGaN/GaN High Electron Mobility Transistors on AlN/Sapphire Templates

por Abid, Idriss, Kabouche, Riad, Bougerol, Catherine, Pernot, Julien, Masante, Cedric, Comyn, Remi, Cordier, Yvon, Medjdoub, Farid
Publicado 2019

Electrical activity at the AlN/Si Interface: identifying the main origin of propagation losses in GaN-on-Si devices at microwave frequencies

por Bah, Micka, Valente, Damien, Lesecq, Marie, Defrance, Nicolas, Garcia Barros, Maxime, De Jaeger, Jean-Claude, Frayssinet, Eric, Comyn, Rémi, Ngo, Thi Huong, Alquier, Daniel, Cordier, Yvon
Publicado 2020