Large-Scale Monolithic Fabrication of III–V Vertical Nanowires on a Standard Si(100) Microelectronic Substrate

por Lecestre, Aurélie, Martin, Mickael, Cristiano, Filadelfo, Baron, Thierry, Larrieu, Guilhem
Publicado 2022

A differential Hall effect measurement method with sub-nanometre resolution for active dopant concentration profiling in ultrathin doped Si(1−)(x)Ge(x) and Si layers

por Daubriac, Richard, Scheid, Emmanuel, Rizk, Hiba, Monflier, Richard, Joblot, Sylvain, Beneyton, Rémi, Acosta Alba, Pablo, Kerdilès, Sébastien, Cristiano, Filadelfo
Publicado 2018