Editorial for the Special Issue on Recent Advances in Thin Film Electronic Devices

por Dong, Chengyuan
Publicado 2022

Influence of Passivation Layers on Positive Gate Bias-Stress Stability of Amorphous InGaZnO Thin-Film Transistors

por Zhou, Yan, Dong, Chengyuan
Publicado 2018

Electrical Performance and Bias-Stress Stability of Amorphous InGaZnO Thin-Film Transistors with Buried-Channel Layers

por Zhang, Ying, Xie, Haiting, Dong, Chengyuan
Publicado 2019

IGFBP5 increases cell invasion and inhibits cell proliferation by EMT and Akt signaling pathway in Glioblastoma multiforme cells

por Dong, Chengyuan, Zhang, Junwen, Fang, Sheng, Liu, Fusheng
Publicado 2020

Atmosphere Effect in Post-Annealing Treatments for Amorphous InGaZnO Thin-Film Transistors with SiO(x) Passivation Layers

por Zhang, Wen, Fan, Zenghui, Shen, Ao, Dong, Chengyuan
Publicado 2021

Amorphous InGaZnO Thin-Film Transistors with Double-Stacked Channel Layers for Ultraviolet Light Detection

por Fan, Zenghui, Shen, Ao, Xia, Yong, Dong, Chengyuan
Publicado 2022

Identification of the proliferative effect of Smad2 and 3 in the TGF β2/Smad signaling pathway using RNA interference in a glioma cell line

por DONG, CHENGYUAN, MI, RUIFANG, JIN, GUISHAN, ZHOU, YIQIANG, ZHANG, JIN, LIU, FUSHENG
Publicado 2015