Real-time direct and diffraction X-ray imaging of irregular silicon wafer breakage

por Rack, Alexander, Scheel, Mario, Danilewsky, Andreas N.
Publicado 2016

X-ray diffraction imaging of fully packaged n–p–n transistors under accelerated ageing conditions

por Tanner, Brian K., Danilewsky, Andreas, McNally, Patrick J.
Publicado 2022

Analysis of the Basal Plane Dislocation Density and Thermomechanical Stress during 100 mm PVT Growth of 4H-SiC

por Steiner, Johannes, Roder, Melissa, Nguyen, Binh Duong, Sandfeld, Stefan, Danilewsky, Andreas, Wellmann, Peter J.
Publicado 2019

Dislocation arrangements in 4H-SiC and their influence on the local crystal lattice properties

por Roder, Melissa, Steiner, Johannes, Wellmann, Peter, Kabukcuoglu, Merve, Hamann, Elias, Haaga, Simon, Hänschke, Daniel, Danilewsky, Andreas
Publicado 2023

Dynamical X-ray diffraction imaging of voids in dislocation-free high-purity germanium single crystals

por Gradwohl, Kevin-P., Danilewsky, Andreas N., Roder, Melissa, Schmidbauer, Martin, Janicskó-Csáthy, József, Gybin, Alexander, Abrosimov, Nikolay, Sumathi, R. Radhakrishnan
Publicado 2020

Crack propagation and fracture in silicon wafers under thermal stress

por Danilewsky, Andreas, Wittge, Jochen, Kiefl, Konstantin, Allen, David, McNally, Patrick, Garagorri, Jorge, Elizalde, M. Reyes, Baumbach, Tilo, Tanner, Brian K.
Publicado 2013

Large-Scale Defect Clusters with Hexagonal Honeycomb-like Arrangement in Ammonothermal GaN Crystals

por Kirste, Lutz, Tran Thi Caliste, Thu Nhi, Weyher, Jan L., Smalc-Koziorowska, Julita, Zajac, Magdalena A., Kucharski, Robert, Sochacki, Tomasz, Grabianska, Karolina, Iwinska, Malgorzata, Detlefs, Carsten, Danilewsky, Andreas N., Bockowski, Michal, Baruchel, José
Publicado 2022