A differential Hall effect measurement method with sub-nanometre resolution for active dopant concentration profiling in ultrathin doped Si(1−)(x)Ge(x) and Si layers

por Daubriac, Richard, Scheid, Emmanuel, Rizk, Hiba, Monflier, Richard, Joblot, Sylvain, Beneyton, Rémi, Acosta Alba, Pablo, Kerdilès, Sébastien, Cristiano, Filadelfo
Publicado 2018

Atomistic Insights into Ultrafast SiGe Nanoprocessing

por Calogero, Gaetano, Raciti, Domenica, Ricciarelli, Damiano, Acosta-Alba, Pablo, Cristiano, Fuccio, Daubriac, Richard, Demoulin, Remi, Deretzis, Ioannis, Fisicaro, Giuseppe, Hartmann, Jean-Michel, Kerdilès, Sébastien, La Magna, Antonino
Publicado 2023