Surface-Potential-Based Compact Modeling of p-GaN Gate HEMTs

por Wang, Jie, Chen, Zhanfei, You, Shuzhen, Bakeroot, Benoit, Liu, Jun, Decoutere, Stefaan
Publicado 2021

Use of Bilayer Gate Insulator in GaN-on-Si Vertical Trench MOSFETs: Impact on Performance and Reliability

por Mukherjee, Kalparupa, De Santi, Carlo, Borga, Matteo, You, Shuzhen, Geens, Karen, Bakeroot, Benoit, Decoutere, Stefaan, Meneghesso, Gaudenzio, Zanoni, Enrico, Meneghini, Matteo
Publicado 2020

Understanding the Leakage Mechanisms and Breakdown Limits of Vertical GaN-on-Si p(+)n(−)n Diodes: The Road to Reliable Vertical MOSFETs

por Mukherjee, Kalparupa, De Santi, Carlo, Buffolo, Matteo, Borga, Matteo, You, Shuzhen, Geens, Karen, Bakeroot, Benoit, Decoutere, Stefaan, Gerosa, Andrea, Meneghesso, Gaudenzio, Zanoni, Enrico, Meneghini, Matteo
Publicado 2021

Development and analysis of thick GaN drift layers on 200 mm CTE-matched substrate for vertical device processing

por Gonçalez Filho, Walter, Borga, Matteo, Geens, Karen, Cingu, Deepthi, Chatterjee, Urmimala, Banerjee, Sourish, Vohra, Anurag, Han, Han, Minj, Albert, Hahn, Herwig, Marx, Matthias, Fahle, Dirk, Bakeroot, Benoit, Decoutere, Stefaan
Publicado 2023

Challenges and Perspectives for Vertical GaN-on-Si Trench MOS Reliability: From Leakage Current Analysis to Gate Stack Optimization

por Mukherjee, Kalparupa, De Santi, Carlo, Borga, Matteo, Geens, Karen, You, Shuzhen, Bakeroot, Benoit, Decoutere, Stefaan, Diehle, Patrick, Hübner, Susanne, Altmann, Frank, Buffolo, Matteo, Meneghesso, Gaudenzio, Zanoni, Enrico, Meneghini, Matteo
Publicado 2021