Insight into over Repair of Hot Carrier Degradation by GIDL Current in Si p-FinFETs Using Ultra-Fast Measurement Technique

por Chang, Hao, Wang, Guilei, Yang, Hong, Liu, Qianqian, Zhou, Longda, Ji, Zhigang, Yu, Ruixi, Wu, Zhenhua, Yin, Huaxiang, Du, Anyan, Li, Junfeng, Luo, Jun, Zhao, Chao, Wang, Wenwu
Publicado 2023

Investigation on Ge(0.8)Si(0.2)-Selective Atomic Layer Wet-Etching of Ge for Vertical Gate-All-Around Nanodevice

por Xie, Lu, Zhu, Huilong, Zhang, Yongkui, Ai, Xuezheng, Li, Junjie, Wang, Guilei, Du, Anyan, Kong, Zhenzhen, Wang, Qi, Lu, Shunshun, Li, Chen, Li, Yangyang, Huang, Weixing, Radamson, Henry H.
Publicado 2021

Investigation on Recrystallization Channel for Vertical C-Shaped-Channel Nanosheet FETs by Laser Annealing

por Chen, Zhuo, Zhu, Huilong, Wang, Guilei, Wang, Qi, Xiao, Zhongrui, Zhang, Yongkui, Liu, Jinbiao, Lu, Shunshun, Du, Yong, Yu, Jiahan, Xiong, Wenjuan, Kong, Zhenzhen, Du, Anyan, Yan, Zijin, Zheng, Yantong
Publicado 2023

High-Quality Recrystallization of Amorphous Silicon on Si (100) Induced via Laser Annealing at the Nanoscale

por Chen, Zhuo, Zhu, Huilong, Wang, Guilei, Wang, Qi, Xiao, Zhongrui, Zhang, Yongkui, Liu, Jinbiao, Lu, Shunshun, Du, Yong, Yu, Jiahan, Xiong, Wenjuan, Kong, Zhenzhen, Du, Anyan, Yan, Zijin, Zheng, Yantong
Publicado 2023

Strained Si(0.2)Ge(0.8)/Ge multilayer Stacks Epitaxially Grown on a Low-/High-Temperature Ge Buffer Layer and Selective Wet-Etching of Germanium

por Xie, Lu, Zhu, Huilong, Zhang, Yongkui, Ai, Xuezheng, Wang, Guilei, Li, Junjie, Du, Anyan, Kong, Zhenzhen, Yin, Xiaogen, Li, Chen, Zhao, Liheng, Li, Yangyang, Jia, Kunpeng, Li, Ben, Radamson, Henry H.
Publicado 2020

A Novel Dry Selective Isotropic Atomic Layer Etching of SiGe for Manufacturing Vertical Nanowire Array with Diameter Less than 20 nm

por Li, Junjie, Li, Yongliang, Zhou, Na, Wang, Guilei, Zhang, Qingzhu, Du, Anyan, Zhang, Yongkui, Gao, Jianfeng, Kong, Zhenzhen, Lin, Hongxiao, Xiang, Jinjuan, Li, Chen, Yin, Xiaogen, Li, Yangyang, Wang, Xiaolei, Yang, Hong, Ma, Xueli, Han, Jianghao, Zhang, Jing, Hu, Tairan, Yang, Tao, Li, Junfeng, Yin, Huaxiang, Zhu, Huilong, Wang, Wenwu, Radamson, Henry H.
Publicado 2020

Study of Silicon Nitride Inner Spacer Formation in Process of Gate-all-around Nano-Transistors

por Li, Junjie, Li, Yongliang, Zhou, Na, Xiong, Wenjuan, Wang, Guilei, Zhang, Qingzhu, Du, Anyan, Gao, Jianfeng, Kong, Zhenzhen, Lin, Hongxiao, Xiang, Jinjuan, Li, Chen, Yin, Xiaogen, Wang, Xiaolei, Yang, Hong, Ma, Xueli, Han, Jianghao, Zhang, Jing, Hu, Tairan, Cao, Zhe, Yang, Tao, Li, Junfeng, Yin, Huaxiang, Zhu, Huilong, Luo, Jun, Wang, Wenwu, Radamson, Henry H.
Publicado 2020