Effective Schottky barrier lowering of NiGe/p-Ge(100) using Terbium interlayer structure for high performance p-type MOSFETs

por Eadi, Sunil Babu, Lee, Jeong Chan, Song, Hyeong-Sub, Oh, Jungwoo, Lee, Ga-Won, Lee, Hi-Deok
Publicado 2020

Effect of high-pressure D(2) and H(2) annealing on LFN properties in FD-SOI pTFET

por Shin, Hyun-Jin, Eadi, Sunil Babu, An, Yeong-Jin, Ryu, Tae-Gyu, Kim, Do-woo, Lee, Hi-Deok, Kwon, Hyuk-Min
Publicado 2022

Zinc oxide and indium-gallium-zinc-oxide bi-layer synaptic device with highly linear long-term potentiation and depression characteristics

por Choi, Hyun-Woong, Song, Ki-Woo, Kim, Seong-Hyun, Nguyen, Kim Thanh, Eadi, Sunil Babu, Kwon, Hyuk-Min, Lee, Hi-Deok
Publicado 2022