High-temperature etching of SiC in SF(6)/O(2) inductively coupled plasma

por Osipov, Artem A., Iankevich, Gleb A., Speshilova, Anastasia B., Osipov, Armenak A., Endiiarova, Ekaterina V., Berezenko, Vladimir I., Tyurikova, Irina A., Tyurikov, Kirill S., Alexandrov, Sergey E.
Publicado 2020

Development of controlled nanosphere lithography technology

por Osipov, Artem A., Gagaeva, Alina E., Speshilova, Anastasiya B., Endiiarova, Ekaterina V., Bespalova, Polina G., Osipov, Armenak A., Belyanov, Ilya A., Tyurikov, Kirill S., Tyurikova, Irina A., Alexandrov, Sergey E.
Publicado 2023

OES diagnostics as a universal technique to control the Si etching structures profile in ICP

por Osipov, Artem A., Iankevich, Gleb A., Speshilova, Anastasia B., Gagaeva, Alina E., Osipov, Armenak A., Enns, Yakov B., Kazakin, Alexey N., Endiiarova, Ekaterina V., Belyanov, Ilya A., Ivanov, Viktor I., Alexandrov, Sergey E.
Publicado 2022