Strain Analysis of GaN HEMTs on (111) Silicon with Two Transitional Al(x)Ga(1−x)N Layers

por Cai, Yuefei, Zhu, Chenqi, Jiu, Ling, Gong, Yipin, Yu, Xiang, Bai, Jie, Esendag, Volkan, Wang, Tao
Publicado 2018

Spatially-resolved optical and structural properties of semi-polar [Formula: see text] Al(x)Ga(1−x)N with x up to 0.56

por Bruckbauer, Jochen, Li, Zhi, Naresh-Kumar, G., Warzecha, Monika, Edwards, Paul R., Jiu, Ling, Gong, Yipin, Bai, Jie, Wang, Tao, Trager-Cowan, Carol, Martin, Robert W.
Publicado 2017