Effects of MOVPE Growth Conditions on GaN Layers Doped with Germanium

por Schiavon, Dario, Litwin-Staszewska, Elżbieta, Jakieła, Rafał, Grzanka, Szymon, Perlin, Piotr
Publicado 2021

Palladium-Based Contacts on p-GaN and Their Application in Laser Diodes

por Levchenko, Iryna, Kryvyi, Serhii, Kamińska, Eliana, Grzanka, Szymon, Grzanka, Ewa, Marona, Łucja, Perlin, Piotr
Publicado 2023

Role of dislocations in nitride laser diodes with different indium content

por Bojarska-Cieślińska, Agata, Marona, Łucja, Smalc-Koziorowska, Julita, Grzanka, Szymon, Weyher, Jan, Schiavon, Dario, Perlin, Piotr
Publicado 2021

Monolithic 45 Degree Deflecting Mirror as a Key Element for Realization of 2D Arrays of Laser Diodes Based on AlInGaN Semiconductors

por Saba, Kiran, Kafar, Anna, Kacperski, Jacek, Gibasiewicz, Krzysztof, Schiavon, Dario, Oto, Takao, Grzanka, Szymon, Perlin, Piotr
Publicado 2023

Indium Incorporation into InGaN Quantum Wells Grown on GaN Narrow Stripes

por Sarzyński, Marcin, Grzanka, Ewa, Grzanka, Szymon, Targowski, Grzegorz, Czernecki, Robert, Reszka, Anna, Holy, Vaclav, Nitta, Shugo, Liu, Zhibin, Amano, Hiroshi, Leszczyński, Mike
Publicado 2019

The impact of point defects in n-type GaN layers on thermal decomposition of InGaN/GaN QWs

por Grabowski, Mikolaj, Grzanka, Ewa, Grzanka, Szymon, Lachowski, Artur, Smalc-Koziorowska, Julita, Czernecki, Robert, Hrytsak, Roman, Moneta, Joanna, Gawlik, Grzegorz, Turos, Andrzej, Leszczyński, Mike
Publicado 2021