High quality AlN epilayers grown on nitrided sapphire by metal organic chemical vapor deposition

por Wang, Jiaming, Xu, Fujun, He, Chenguang, Zhang, Lisheng, Lu, Lin, Wang, Xinqiang, Qin, Zhixin, Shen, Bo
Publicado 2017

Free and bound excitonic effects in Al(0.5)Ga(0.5)N/Al(0.35)Ga(0.65)N MQWs with different Si-doping levels in the well layers

por He, Chenguang, Qin, Zhixin, Xu, Fujun, Hou, Mengjun, Zhang, Shan, Zhang, Lisheng, Wang, Xinqiang, Ge, Weikun, Shen, Bo
Publicado 2015

Epitaxial Lift-Off of Flexible GaN-Based HEMT Arrays with Performances Optimization by the Piezotronic Effect

por Chen, Xin, Dong, Jianqi, He, Chenguang, He, Longfei, Chen, Zhitao, Li, Shuti, Zhang, Kang, Wang, Xingfu, Wang, Zhong Lin
Publicado 2021

Mechanism of stress-driven composition evolution during hetero-epitaxy in a ternary AlGaN system

por He, Chenguang, Qin, Zhixin, Xu, Fujun, Zhang, Lisheng, Wang, Jiaming, Hou, Mengjun, Zhang, Shan, Wang, Xinqiang, Ge, Weikun, Shen, Bo
Publicado 2016

High quality N-polar GaN films grown with varied V/III ratios by metal–organic vapor phase epitaxy

por Li, Chengguo, Zhang, Kang, Qiaoyu Zeng, Yin, Xuebing, Ge, Xiaoming, Wang, Junjun, Wang, Qiao, He, Chenguang, Zhao, Wei, Chen, Zhitao
Publicado 2020

High-quality AlN epitaxy on nano-patterned sapphire substrates prepared by nano-imprint lithography

por Zhang, Lisheng, Xu, Fujun, Wang, Jiaming, He, Chenguang, Guo, Weiwei, Wang, Mingxing, Sheng, Bowen, Lu, Lin, Qin, Zhixin, Wang, Xinqiang, Shen, Bo
Publicado 2016

Growth of high quality and uniformity AlGaN/GaN heterostructures on Si substrates using a single AlGaN layer with low Al composition

por Cheng, Jianpeng, Yang, Xuelin, Sang, Ling, Guo, Lei, Zhang, Jie, Wang, Jiaming, He, Chenguang, Zhang, Lisheng, Wang, Maojun, Xu, Fujun, Tang, Ning, Qin, Zhixin, Wang, Xinqiang, Shen, Bo
Publicado 2016