Investigation of high resistivity p-type FZ silicon diodes after 60Co γ-irradiation

por Liao, C., Fretwurst, E., Garutti, E., Schwandt, J., Pintilie, I., Himmerlich, A., Moll, M., Gurimskaya, Y., Li, Z.
Publicado 2023

The Boron–Oxygen (BᵢOᵢ) Defect Complex Induced by Irradiation With 23 GeV Protons in p-Type Epitaxial Silicon Diodes

por Liao, C, Fretwurst, E, Garutti, E, Schwandt, J, Moll, M, Himmerlich, A, Gurimskaya, Y, Pintilie, I, Nitescu, A, Li, Z, Makarenko, L
Publicado 2022

Investigation of the Boron removal effect induced by 5.5 MeV electrons on highly doped EPI- and Cz-silicon

por Liao, C., Fretwurst, E., Garutti, E., Schwandt, J., Makarenko, L., Pintilie, I., Filip, Lucian D., Himmerlich, A., Moll, M., Gurimskaya, Y., Li, Z.
Publicado 2023