Enhancement of gallium nitride on silicon (111) using pulse atomic-layer epitaxy (PALE) AlN with composition-graded AlGaN buffer

por Mansor, Marwan, Norhaniza, Rizuan, Shuhaimi, Ahmad, Hisyam, Muhammad Iznul, Omar, Al-Zuhairi, Williams, Adam, Mat Hussin, Mohd Rofei
Publicado 2023