Suppressing the Initial Growth of Sidewall GaN by Modifying Micron-Sized Patterned Sapphire Substrate with H(3)PO(4)-Based Etchant

por Hsu, Wen-Yang, Lian, Yuan-Chi, Wu, Pei-Yu, Yong, Wei-Min, Sheu, Jinn-Kong, Lin, Kun-Lin, Wu, YewChung Sermon
Publicado 2018