Effects of GaN/AlGaN/Sputtered AlN nucleation layers on performance of GaN-based ultraviolet light-emitting diodes

por Hu, Hongpo, Zhou, Shengjun, Liu, Xingtong, Gao, Yilin, Gui, Chengqun, Liu, Sheng
Publicado 2017

Effect of strain relaxation on performance of InGaN/GaN green LEDs grown on 4-inch sapphire substrate with sputtered AlN nucleation layer

por Hu, Hongpo, Zhou, Shengjun, Wan, Hui, Liu, Xingtong, Li, Ning, Xu, Haohao
Publicado 2019

Heteroepitaxial Growth of High-Quality and Crack-Free AlN Film on Sapphire Substrate with Nanometer-Scale-Thick AlN Nucleation Layer for AlGaN-Based Deep Ultraviolet Light-Emitting...

por Zhao, Jie, Hu, Hongpo, Lei, Yu, Wan, Hui, Gong, Liyan, Zhou, Shengjun
Publicado 2019