A SiC Planar MOSFET with an Embedded MOS-Channel Diode to Improve Reverse Conduction and Switching

por Li, Ping, Guo, Jingwei, Hu, Shengdong, Lin, Zhi
Publicado 2023

SiC Heterojunction Trench MOSFET with a Buried P-Type Pillar for the Low Gate-Drain Charge and Switching Loss

por Ran, Shenglong, Huang, Zhiyong, Hu, Shengdong, Yang, Han
Publicado 2022

Integrating a Soft Body Diode in the Super-Junction MOSFET by Using an n(−)/n(+)-Buffer Layer

por Lin, Zhi, Zeng, Wei, Wang, Da, Li, Ping, Hu, Shengdong
Publicado 2022

TCAD-Based Investigation of a 650 V 4H-SiC Trench MOSFET with a Hetero-Junction Body Diode

por Wang, Ruoyu, Guo, Jingwei, Liu, Chang, Wu, Hao, Huang, Zhiyong, Hu, Shengdong
Publicado 2022

A Novel AlGaN/Si(3)N(4) Compound Buffer Layer HEMT with Improved Breakdown Performances

por Guo, Jingwei, Hu, Shengdong, Li, Ping, Jiang, Jie, Wang, Ruoyu, Wang, Yuan, Wu, Hao
Publicado 2022

Analysis and Hardening of SEGR in Trench VDMOS with Termination Structure

por Wang, Yuan, Liu, Tao, Qian, Lingli, Wu, Hao, Yu, Yiren, Tao, Jingyu, Cheng, Zijun, Hu, Shengdong
Publicado 2023

Simulation Studies on Single-Event Effects and the Mechanisms of SiC VDMOS from a Structural Perspective

por Liu, Tao, Wang, Yuan, Ma, Rongyao, Wu, Hao, Tao, Jingyu, Yu, Yiren, Cheng, Zijun, Hu, Shengdong
Publicado 2023

The Influence of Special Environments on SiC MOSFETs

por Li, Zhigang, Jiang, Jie, He, Zhiyuan, Hu, Shengdong, Shi, Yijun, Zhao, Zhenbo, He, Yigang, Chen, Yiqiang, Lu, Guoguang
Publicado 2023

Effect of Electro-Thermo-Mechanical Coupling Stress on Top-Cooled E-Mode AlGaN/GaN HEMT

por Jiang, Jie, Chen, Qiuqi, Hu, Shengdong, Shi, Yijun, He, Zhiyuan, Huang, Yun, Hui, Caixin, Chen, Yiqiang, Wu, Hao, Lu, Guoguang
Publicado 2023