Impacts of Thermal Atomic Layer-Deposited AlN Passivation Layer on GaN-on-Si High Electron Mobility Transistors

por Zhao, Sheng-Xun, Liu, Xiao-Yong, Zhang, Lin-Qing, Huang, Hong-Fan, Shi, Jin-Shan, Wang, Peng-Fei
Publicado 2016

AlGaN/GaN MISHEMTs with AlN gate dielectric grown by thermal ALD technique

por Liu, Xiao-Yong, Zhao, Sheng-Xun, Zhang, Lin-Qing, Huang, Hong-Fan, Shi, Jin-Shan, Zhang, Chun-Min, Lu, Hong-Liang, Wang, Peng-Fei, Zhang, David Wei
Publicado 2015