Screw-Dislocation-Driven Growth Mode in Two Dimensional GaSe on GaAs(001) Substrates Grown by Molecular Beam Epitaxy

por Diep, Nhu Quynh, Liu, Cheng-Wei, Wu, Ssu-Kuan, Chou, Wu-Ching, Huynh, Sa Hoang, Chang, Edward Yi
Publicado 2019

Pressure induced structural phase crossover of a GaSe epilayer grown under screw dislocation driven mode and its phase recovery

por Diep, Nhu Quynh, Wu, Ssu Kuan, Liu, Cheng Wei, Huynh, Sa Hoang, Chou, Wu Ching, Lin, Chih Ming, Zhang, Dong Zhou, Ho, Ching Hwa
Publicado 2021

Substrate-induced strain in 2D layered GaSe materials grown by molecular beam epitaxy

por Liu, Cheng-Wei, Dai, Jin-Ji, Wu, Ssu-Kuan, Diep, Nhu-Quynh, Huynh, Sa-Hoang, Mai, Thi-Thu, Wen, Hua-Chiang, Yuan, Chi-Tsu, Chou, Wu-Ching, Shen, Ji-Lin, Luc, Huy-Hoang
Publicado 2020