Development of Virtual Metrology Using Plasma Information Variables to Predict Si Etch Profile Processed by SF(6)/O(2)/Ar Capacitively Coupled Plasma

por Kwon, Ji-Won, Ryu, Sangwon, Park, Jihoon, Lee, Haneul, Jang, Yunchang, Park, Seolhye, Kim, Gon-Ho
Publicado 2021