SiN(x)/(Al,Ga)N interface barrier in N-polar III-nitride transistor structures studied by modulation spectroscopy

por Janicki, Ł., Li, H., Keller, S., Mishra, U. K., Kudrawiec, R.
Publicado 2020

Fermi level and bands offsets determination in insulating (Ga,Mn)N/GaN structures

por Janicki, L., Kunert, G., Sawicki, M., Piskorska-Hommel, E., Gas, K., Jakiela, R., Hommel, D., Kudrawiec, R.
Publicado 2017