Sensitivity of Inner Spacer Thickness Variations for Sub-3-nm Node Silicon Nanosheet Field-Effect Transistors

por Lee, Sanguk, Jeong, Jinsu, Yoon, Jun-Sik, Lee, Seunghwan, Lee, Junjong, Lim, Jaewan, Baek, Rock-Hyun
Publicado 2022

A Novel Source/Drain Extension Scheme with Laser-Spike Annealing for Nanosheet Field-Effect Transistors in 3D ICs

por Lee, Sanguk, Jeong, Jinsu, Kang, Bohyeon, Lee, Seunghwan, Lee, Junjong, Lim, Jaewan, Hwang, Hyeonjun, Ahn, Sungmin, Baek, Rockhyun
Publicado 2023

Novel Modeling Approach to Analyze Threshold Voltage Variability in Short Gate-Length (15–22 nm) Nanowire FETs with Various Channel Diameters

por Lee, Seunghwan, Yoon, Jun-Sik, Lee, Junjong, Jeong, Jinsu, Yun, Hyeok, Lim, Jaewan, Lee, Sanguk, Baek, Rock-Hyun
Publicado 2022