Laser Processing of Transparent Wafers with a AlGaN/GaN Heterostructures and High-Electron Mobility Devices on a Backside

por Indrišiūnas, Simonas, Svirplys, Evaldas, Jorudas, Justinas, Kašalynas, Irmantas
Publicado 2021

High-Frequency and High-Power Performance of n-Type GaN Epilayers with Low Electron Density Grown on Native Substrate

por Balagula, Roman M., Subačius, Liudvikas, Jorudas, Justinas, Janonis, Vytautas, Prystawko, Pawel, Grabowski, Mikolaj, Kašalynas, Irmantas
Publicado 2022

Green Removal of DUV-Polarity-Modified PMMA for Wet Transfer of CVD Graphene

por Jorudas, Justinas, Pashnev, Daniil, Kašalynas, Irmantas, Ignatjev, Ilja, Niaura, Gediminas, Selskis, Algirdas, Astachov, Vladimir, Alexeeva, Natalia
Publicado 2022

Development of Quaternary InAlGaN Barrier Layer for High Electron Mobility Transistor Structures

por Jorudas, Justinas, Prystawko, Paweł, Šimukovič, Artūr, Aleksiejūnas, Ramūnas, Mickevičius, Jūras, Kryśko, Marcin, Michałowski, Paweł Piotr, Kašalynas, Irmantas
Publicado 2022

AlGaN/GaN on SiC Devices without a GaN Buffer Layer: Electrical and Noise Characteristics

por Jorudas, Justinas, Šimukovič, Artūr, Dub, Maksym, Sakowicz, Maciej, Prystawko, Paweł, Indrišiūnas, Simonas, Kovalevskij, Vitalij, Rumyantsev, Sergey, Knap, Wojciech, Kašalynas, Irmantas
Publicado 2020