Reliability of high mobility SiGe channel MOSFETs for future CMOS applications

por Franco, Jacopo, Kaczer, Ben, Groeseneken, Guido
Publicado 2014

Correlated Time-0 and Hot-Carrier Stress Induced FinFET Parameter Variabilities: Modeling Approach

por Makarov, Alexander, Roussel, Philippe, Bury, Erik, Vandemaele, Michiel, Spessot, Alessio, Linten, Dimitri, Kaczer, Ben, Tyaginov, Stanislav
Publicado 2020

Compact Physics Hot-Carrier Degradation Model Valid over a Wide Bias Range

por Tyaginov, Stanislav, Bury, Erik, Grill, Alexander, Yu, Zhuoqing, Makarov, Alexander, De Keersgieter, An, Vexler, Mikhail, Vandemaele, Michiel, Wang, Runsheng, Spessot, Alessio, Chasin, Adrian, Kaczer, Ben
Publicado 2023

Understanding the Origin of Metal Gate Work Function Shift and Its Impact on Erase Performance in 3D NAND Flash Memories

por Ramesh, Sivaramakrishnan, Ajaykumar, Arjun, Ragnarsson, Lars-Åke, Breuil, Laurent, El Hajjam, Gabriel Khalil, Kaczer, Ben, Belmonte, Attilio, Nyns, Laura, Soulié, Jean-Philippe, Van den bosch, Geert, Rosmeulen, Maarten
Publicado 2021

Impact of Nitridation on Bias Temperature Instability and Hard Breakdown Characteristics of SiON MOSFETs

por Tyaginov, Stanislav, O’Sullivan, Barry, Chasin, Adrian, Rawal, Yaksh, Chiarella, Thomas, de Carvalho Cavalcante, Camila Toledo, Kimura, Yosuke, Vandemaele, Michiel, Ritzenthaler, Romain, Mitard, Jerome, Palayam, Senthil Vadakupudhu, Reifsnider, Jason, Kaczer, Ben
Publicado 2023