On the Vertically Stacked Gate-All-Around Nanosheet and Nanowire Transistor Scaling beyond the 5 nm Technology Node

por Wong, Hei, Kakushima, Kuniyuki
Publicado 2022

Poole–Frenkel (PF)-MOS: A Proposal for the Ultimate Scale of an MOS Transistor

por Wong, Hei, Kakushima, Kuniyuki
Publicado 2023

Role of Dislocation Movement in the Electrical Conductance of Nanocontacts

por Ishida, Tadashi, Kakushima, Kuniyuki, Mizoguchi, Teruyasu, Fujita, Hiroyuki
Publicado 2012

Characteristic Variabilities of Subnanometer EOT La(2)O(3) Gate Dielectric Film of Nano CMOS Devices

por Wong, Hei, Zhang, Jieqiong, Iwai, Hiroshi, Kakushima, Kuniyuki
Publicado 2021

The interfaces of lanthanum oxide-based subnanometer EOT gate dielectrics

por Wong, Hei, Zhou, Jian, Zhang, Jieqiong, Jin, Hao, Kakushima, Kuniyuki, Iwai, Hiroshi
Publicado 2014

Ferromagnetism modulation by ultralow current in a two-dimensional polycrystalline molybdenum disulphide atomic layered structure

por Muneta, Iriya, Shirokura, Takanori, Hai, Pham Nam, Kakushima, Kuniyuki, Tsutsui, Kazuo, Wakabayashi, Hitoshi
Publicado 2022