Effects of a Si-doped InGaN Underlayer on the Optical Properties of InGaN/GaN Quantum Well Structures with Different Numbers of Quantum Wells

por Christian, George, Kappers, Menno, Massabuau, Fabien, Humphreys, Colin, Oliver, Rachel, Dawson, Philip
Publicado 2018

Characterisation of InGaN by Photoconductive Atomic Force Microscopy

por Weatherley, Thomas F. K., Massabuau, Fabien C.-P., Kappers, Menno J., Oliver, Rachel A.
Publicado 2018

InGaN as a Substrate for AC Photoelectrochemical Imaging

por Zhou, Bo, Das, Anirban, Kappers, Menno J., Oliver, Rachel A., Humphreys, Colin J., Krause, Steffi
Publicado 2019

Low defect large area semi-polar (11[Image: see text]2) GaN grown on patterned (113) silicon

por Pristovsek, Markus, Han, Yisong, Zhu, Tongtong, Frentrup, Martin, Kappers, Menno J, Humphreys, Colin J, Kozlowski, Grzegorz, Maaskant, Pleun, Corbett, Brian
Publicado 2015

Cavity Enhancement of Single Quantum Dot Emission in the Blue

por Taylor, Robert A, Jarjour, Anas F, Collins, Daniel P, Holmes, Mark J, Oliver, Rachel A, Kappers, Menno J, Humphreys, Colin J
Publicado 2009

Self-assembled Multilayers of Silica Nanospheres for Defect Reduction in Non- and Semipolar Gallium Nitride Epitaxial Layers

por Zhu, Tongtong, Ding, Tao, Tang, Fengzai, Han, Yisong, Ali, Muhammad, Badcock, Tom, Kappers, Menno J., Shields, Andrew J., Smoukov, Stoyan K., Oliver, Rachel A.
Publicado 2015

Hysteretic Photochromic Switching (HPS) in Doubly Doped GaN(Mg):Eu—A Summary of Recent Results

por Edwards, Paul R., O’Donnell, Kevin P., Singh, Akhilesh K., Cameron, Douglas, Lorenz, Katharina, Yamaga, Mitsuo, Leach, Jacob H., Kappers, Menno J., Boćkowski, Michal
Publicado 2018

A study of the optical and polarisation properties of InGaN/GaN multiple quantum wells grown on a-plane and m-plane GaN substrates

por Kundys, Dmytro, Sutherland, Danny, Davies, Matthew J., Oehler, Fabrice, Griffiths, James, Dawson, Philip, Kappers, Menno J., Humphreys, Colin J., Schulz, Stefan, Tang, Fengzai, Oliver, Rachel A.
Publicado 2016

Origin(s) of Anomalous Substrate Conduction in MOVPE-Grown GaN HEMTs on Highly Resistive Silicon

por Ghosh, Saptarsi, Hinz, Alexander, Fairclough, Simon M., Spiridon, Bogdan F., Eblabla, Abdalla, Casbon, Michael A., Kappers, Menno J., Elgaid, Khaled, Alam, Saiful, Oliver, Rachel A., Wallis, David J.
Publicado 2021

Nanocathodoluminescence Reveals Mitigation of the Stark Shift in InGaN Quantum Wells by Si Doping

por Griffiths, James T., Zhang, Siyuan, Rouet-Leduc, Bertrand, Fu, Wai Yuen, Bao, An, Zhu, Dandan, Wallis, David J., Howkins, Ashley, Boyd, Ian, Stowe, David, Kappers, Menno J., Humphreys, Colin J., Oliver, Rachel A.
Publicado 2015

Surface Zeta Potential and Diamond Seeding on Gallium Nitride Films

por Mandal, Soumen, Thomas, Evan L. H., Middleton, Callum, Gines, Laia, Griffiths, James T., Kappers, Menno J., Oliver, Rachel A., Wallis, David J., Goff, Lucy E., Lynch, Stephen A., Kuball, Martin, Williams, Oliver A.
Publicado 2017

Lattice Location Studies of the Amphoteric Nature of Implanted Mg in GaN

por Wahl, Ulrich, Correia, João Guilherme, Costa, Ângelo R. G., David‐Bosne, Eric, Kappers, Menno J., da Silva, Manuel Ribeiro, Lippertz, Gertjan, Lima, Tiago A. L., Villarreal, Renan, Vantomme, André, Pereira, Lino M. C.
Publicado 2021

Additive GaN Solid Immersion Lenses for Enhanced Photon Extraction Efficiency from Diamond Color Centers

por Cheng, Xingrui, Wessling, Nils Kolja, Ghosh, Saptarsi, Kirkpatrick, Andrew R., Kappers, Menno J., Lekhai, Yashna N. D., Morley, Gavin W., Oliver, Rachel A., Smith, Jason M., Dawson, Martin D., Salter, Patrick S., Strain, Michael J.
Publicado 2023

Lattice location of Mg in GaN: a fresh look at doping limitations

por Wahl, Ulrich, Amorim, Lígia, Augustyns, Valerie, Granadeiro Costa, Angelo Rafael, David Bosne, Eric, De Lemos Lima, Tiago Abel, Lippertz, Gertjan, Martins Correia, Joao, Castro Ribeiro Da Silva, Manuel, Kappers, Menno, Temst, Kristiaan, Vantomme, André, Da Costa Pereira, Lino Miguel
Publicado 2017