Thickness effect of ultra-thin Ta(2)O(5) resistance switching layer in 28 nm-diameter memory cell

por Park, Tae Hyung, Song, Seul Ji, Kim, Hae Jin, Kim, Soo Gil, Chung, Suock, Kim, Beom Yong, Lee, Kee Jeung, Kim, Kyung Min, Choi, Byung Joon, Hwang, Cheol Seong
Publicado 2015

A Comparative Study on the Ferroelectric Performances in Atomic Layer Deposited Hf(0.5)Zr(0.5)O(2) Thin Films Using Tetrakis(ethylmethylamino) and Tetrakis(dimethylamino) Precursor...

por Kim, Baek Su, Hyun, Seung Dam, Moon, Taehwan, Do Kim, Keum, Lee, Young Hwan, Park, Hyeon Woo, Lee, Yong Bin, Roh, Jangho, Kim, Beom Yong, Kim, Ho Hyun, Park, Min Hyuk, Hwang, Cheol Seong
Publicado 2020