NEXAFS study of electronic and atomic structure of active layer in Al/indium tin oxide/TiO(2) stack during resistive switching

por Filatova, Elena, Konashuk, Aleksei, Petrov, Yuri, Ubyivovk, Evgeny, Sokolov, Andrey, Selivanov, Andrei, Drozd, Victor
Publicado 2016