Radiation Hardness of Silicon Carbide upon High-Temperature Electron and Proton Irradiation

por Lebedev, Alexander A., Kozlovski, Vitali V., Davydovskaya, Klavdia S., Levinshtein, Mikhail E.
Publicado 2021

Features of the Carrier Concentration Determination during Irradiation of Wide-Gap Semiconductors: The Case Study of Silicon Carbide

por Lebedev, Alexander A., Kozlovski, Vitali V., Davydovskaya, Klavdia S., Kuzmin, Roman A., Levinshtein, Mikhail E., Strel’chuk, Anatolii M.
Publicado 2022

Formation of a Bistable Interstitial Complex in Irradiated p‐Type Silicon

por Makarenko, Leonid F, Lastovski, Stanislav B, Yakushevich, Hanna S, Gaubas, Eugenijus, Pavlov, Jevgenij, Kozlovski, Vitali V, Moll, Michael, Pintilie, Ioana
Publicado 2019