On Relationships between Gas-Phase Chemistry and Reactive Ion Etching Kinetics for Silicon-Based Thin Films (SiC, SiO(2) and Si(x)N(y)) in Multi-Component Fluorocarbon Gas Mixtures

por Efremov, Alexander, Lee, Byung Jun, Kwon, Kwang-Ho
Publicado 2021

Plasma Parameters and Etching Characteristics of SiO(x)N(y) Films in CF(4) + O(2) + X (X = C(4)F(8) or CF(2)Br(2)) Gas Mixtures

por Nam, Yunho, Efremov, Alexander, Lee, Byung Jun, Kwon, Kwang-Ho
Publicado 2020

Dry Etching Performance and Gas-Phase Parameters of C(6)F(12)O + Ar Plasma in Comparison with CF(4) + Ar

por Lim, Nomin, Choi, Yeon Sik, Efremov, Alexander, Kwon, Kwang-Ho
Publicado 2021

On Relationships between Plasma Chemistry and Surface Reaction Kinetics Providing the Etching of Silicon in CF(4), CHF(3), and C(4)F(8) Gases Mixed with Oxygen

por Baek, Seung Yong, Efremov, Alexander, Bobylev, Alexander, Choi, Gilyoung, Kwon, Kwang-Ho
Publicado 2023