Vertical GaN MOSFET Power Devices

por Langpoklakpam, Catherine, Liu, An-Chen, Hsiao, Yi-Kai, Lin, Chun-Hsiung, Kuo, Hao-Chung
Publicado 2023

Improving the High-Temperature Gate Bias Instabilities by a Low Thermal Budget Gate-First Process in p-GaN Gate HEMTs

por Langpoklakpam, Catherine, Liu, An-Chen, You, Neng-Jie, Kao, Ming-Hsuan, Huang, Wen-Hsien, Shen, Chang-Hong, Tzou, Jerry, Kuo, Hao-Chung, Shieh, Jia-Min
Publicado 2023

State-of-the-Art β-Ga(2)O(3) Field-Effect Transistors for Power Electronics

por Liu, An-Chen, Hsieh, Chi-Hsiang, Langpoklakpam, Catherine, Singh, Konthoujam James, Lee, Wen-Chung, Hsiao, Yi-Kai, Horng, Ray-Hua, Kuo, Hao-Chung, Tu, Chang-Ching
Publicado 2022

The Evolution of Manufacturing Technology for GaN Electronic Devices

por Liu, An-Chen, Tu, Po-Tsung, Langpoklakpam, Catherine, Huang, Yu-Wen, Chang, Ya-Ting, Tzou, An-Jye, Hsu, Lung-Hsing, Lin, Chun-Hsiung, Kuo, Hao-Chung, Chang, Edward Yi
Publicado 2021

Development of GaN HEMTs Fabricated on Silicon, Silicon-on-Insulator, and Engineered Substrates and the Heterogeneous Integration

por Hsu, Lung-Hsing, Lai, Yung-Yu, Tu, Po-Tsung, Langpoklakpam, Catherine, Chang, Ya-Ting, Huang, Yu-Wen, Lee, Wen-Chung, Tzou, An-Jye, Cheng, Yuh-Jen, Lin, Chun-Hsiung, Kuo, Hao-Chung, Chang, Edward Yi
Publicado 2021