Mechanism understanding in cryo atomic layer etching of SiO(2) based upon C(4)F(8) physisorption

por Antoun, G., Tillocher, T., Lefaucheux, P., Faguet, J., Maekawa, K., Dussart, R.
Publicado 2021

Author Correction: Mechanism understanding in cryo atomic layer etching of SiO(2) based upon C(4)F(8) physisorption

por Antoun, G., Tillocher, T., Lefaucheux, P., Faguet, J., Maekawa, K., Dussart, R.
Publicado 2022

Damage-free plasma etching of porous organo-silicate low-k using micro-capillary condensation above −50 °C

por Chanson, R., Zhang, L., Naumov, S., Mankelevich, Yu. A., Tillocher, T., Lefaucheux, P., Dussart, R., Gendt, S. De, Marneffe, J.-F. de
Publicado 2018