Schottky Emission Distance and Barrier Height Properties of Bipolar Switching Gd:SiOx RRAM Devices under Different Oxygen Concentration Environments

por Chen, Kai-Huang, Tsai, Tsung-Ming, Cheng, Chien-Min, Huang, Shou-Jen, Chang, Kuan-Chang, Liang, Shu-Ping, Young, Tai-Fa
Publicado 2017

Improvement of Bipolar Switching Properties of Gd:SiO(x) RRAM Devices on Indium Tin Oxide Electrode by Low-Temperature Supercritical CO(2) Treatment

por Chen, Kai-Huang, Chang, Kuan-Chang, Chang, Ting-Chang, Tsai, Tsung-Ming, Liang, Shu-Ping, Young, Tai-Fa, Syu, Yong-En, Sze, Simon M.
Publicado 2016

Illumination Effect on Bipolar Switching Properties of Gd:SiO(2) RRAM Devices Using Transparent Indium Tin Oxide Electrode

por Chen, Kai-Huang, Chang, Kuan-Chang, Chang, Ting-Chang, Tsai, Tsung-Ming, Liang, Shu-Ping, Young, Tai-Fa, Syu, Yong-En, Sze, Simon M.
Publicado 2016