Impact of Electrode Surface Morphology in ZnO-Based Resistive Random Access Memory Fabricated Using the Cu Chemical Displacement Technique

por Wu, Chi-Chang, You, Hsin-Chiang, Lin, Yu-Hsien, Yang, Chia-Jung, Hsiao, Yu-Ping, Liao, Tun-Po, Yang, Wen-Luh
Publicado 2018